Discrete Semiconductor Products

FDFS6N754

Obsolete

ON Semiconductor

INTEGRATED N-CHANNEL POWERTRENCH® MOSFET AND SCHOTTKY DIODE 30V , 4A, 56MΩ

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-751EB-SOIC8

Discrete Semiconductor Products

FDFS6N754

Obsolete

ON Semiconductor

INTEGRATED N-CHANNEL POWERTRENCH® MOSFET AND SCHOTTKY DIODE 30V , 4A, 56MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-751EB-SOIC8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDFS6N754

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	299 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	56 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

FDFS6N548 Series

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V , 4A, 56mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Feature	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDFS6N548	7 A	4.5 V 10 V	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	Surface Mount	8-SOIC	30 V	Schottky Diode (Isolated)	23 mOhm	700 pF	20 V	MOSFET (Metal Oxide)	2.5 V	13 nC	N-Channel
ON Semiconductor FDFS6N754	4 A	4.5 V 10 V	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	Surface Mount	8-SOIC	30 V	Schottky Diode (Isolated)	56 mOhm	299 pF	20 V	MOSFET (Metal Oxide)	2.5 V		N-Channel	6 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDFS6N548 Series

The FDFS6N754 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.