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8-SOIC
Discrete Semiconductor Products

FDFS6N548

Obsolete
ON Semiconductor

INTEGRATED N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET AND SCHOTTKY DIODE 30V, 7A, 23MΩ

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8-SOIC
Discrete Semiconductor Products

FDFS6N548

Obsolete
ON Semiconductor

INTEGRATED N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET AND SCHOTTKY DIODE 30V, 7A, 23MΩ

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Technical Specifications

Parameters and characteristics for this part

SpecificationFDFS6N548
Current - Continuous Drain (Id) @ 25°C7 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rds On (Max) @ Id, Vgs23 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

FDFS6N548 Series

Integrated N-Channel PowerTrench<sup>®</sup> MOSFET and Schottky Diode 30V , 4A, 56mΩ

PartCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Package / CasePackage / Case [y]Package / Case [x]Operating Temperature [Min]Operating Temperature [Max]Mounting TypeSupplier Device PackageDrain to Source Voltage (Vdss)FET FeatureRds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ VdsVgs (Max)TechnologyVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ Vgs [Max]FET TypeGate Charge (Qg) (Max) @ Vgs
8-SOIC
ON Semiconductor
7 A
4.5 V
10 V
8-SOIC
3.9 mm
0.154 in
-55 °C
150 °C
Surface Mount
8-SOIC
30 V
Schottky Diode (Isolated)
23 mOhm
700 pF
20 V
MOSFET (Metal Oxide)
2.5 V
13 nC
N-Channel
8-SOIC
ON Semiconductor
4 A
4.5 V
10 V
8-SOIC
3.9 mm
0.154 in
-55 °C
150 °C
Surface Mount
8-SOIC
30 V
Schottky Diode (Isolated)
56 mOhm
299 pF
20 V
MOSFET (Metal Oxide)
2.5 V
N-Channel
6 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
LCSCPiece 1$ 1.00
10$ 0.81
30$ 0.72
100$ 0.62
500$ 0.57
1000$ 0.54

Description

General part information

FDFS6N548 Series

The FDFS6N754 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.