FDFS6N548 Series

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V , 4A, 56mΩ

Catalog

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V , 4A, 56mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Feature	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDFS6N548	7 A	4.5 V 10 V	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	Surface Mount	8-SOIC	30 V	Schottky Diode (Isolated)	23 mOhm	700 pF	20 V	MOSFET (Metal Oxide)	2.5 V	13 nC	N-Channel
ON Semiconductor FDFS6N754	4 A	4.5 V 10 V	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	Surface Mount	8-SOIC	30 V	Schottky Diode (Isolated)	56 mOhm	299 pF	20 V	MOSFET (Metal Oxide)	2.5 V		N-Channel	6 nC

Catalog

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V , 4A, 56mΩ

Key Features

• Max rDS(on)= 56mΩ at VGS= 0V, ID= 4A

• Max rDS(on) = 75mΩ at VGS= 4.5V, ID= 3.5A

• VF0.45V @ 2A

• VF0.28V @ 100mA

• Schottky and MOSFET incorporated into single powersurface mount SO-8 package

• Electrically independent Schottky and MOSFET pinoutfor design flexibility

• Low Gate Charge (Qg= 4nC)

• Low Miller Charge

Description

The FDFS6N754 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.