Integrated Circuits (ICs)

LMG3522R030QRQSTQ1

Active

AUTOMOTIVE 650-V 30-MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION AND TEMPERATURE REPORTING

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsWide-bandgap semiconductors: Performance and benefits of GaN versus SiC Thermal Design and Performance of Top-Side Cooled QFN 12x12 Package +11

Integrated Circuits (ICs)

LMG3522R030QRQSTQ1

Active

Texas Instruments

AUTOMOTIVE 650-V 30-MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION AND TEMPERATURE REPORTING

Deep-Dive with AI

DocumentsWide-bandgap semiconductors: Performance and benefits of GaN versus SiC Thermal Design and Performance of Top-Side Cooled QFN 12x12 Package +11

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LMG3522R030QRQSTQ1

Configuration	Half Bridge Inverter
Current	55 A
Current - Output (Max) [Max]	38 A
Fault Protection	Over Voltage, Over Temperature, Current Limiting (Adjustable), UVLO
Features	Slew Rate Controlled, Status Flag
Grade	Automotive
Input Type	Non-Inverting
Interface	PWM
Mounting Type	Wettable Flank, Surface Mount
Number of Outputs	1
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Output Configuration	Low Side
Output Type	N-Channel
Package / Case	52-VQFN Exposed Pad
Qualification	AEC-Q100
Ratio - Input:Output [custom]	1:1
Rds On (Typ)	26 mOhm
Supplier Device Package	52-VQFN (12x12)
Switch Type	General Purpose
Type	MOSFET
Voltage	650 V
Voltage - Load	650 V
Voltage - Supply (Vcc/Vdd) [Max]	18 V
Voltage - Supply (Vcc/Vdd) [Min]	7.5 V

LMG3522R030-Q1 Series

Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

Part	Input Type	Operating Temperature [Min]	Operating Temperature [Max]	Output Type	Supplier Device Package	Ratio - Input:Output [custom]	Package / Case	Grade	Current - Output (Max) [Max]	Voltage - Supply (Vcc/Vdd) [Min]	Voltage - Supply (Vcc/Vdd) [Max]	Mounting Type	Fault Protection	Rds On (Typ)	Qualification	Features	Voltage - Load	Number of Outputs	Switch Type	Output Configuration	Current	Voltage	Type	Interface	Configuration
Texas Instruments LMG3522R030QRQSRQ1	Non-Inverting	-40 °C	125 °C	N/P-Channel	52-VQFN (12x12)	1:1	52-VQFN Exposed Pad	Automotive	38 A	7.5 V	18 V	Surface Mount Wettable Flank	Current Limiting (Fixed) Over Temperature Short Circuit UVLO	26 mOhm	AEC-Q100	Slew Rate Controlled Status Flag	650 V	1	General Purpose	Low Side
Texas Instruments LMG3522R030QRQSTQ1	Non-Inverting	-40 °C	125 °C	N-Channel	52-VQFN (12x12)	1:1	52-VQFN Exposed Pad	Automotive	38 A	7.5 V	18 V	Surface Mount Wettable Flank	Current Limiting (Adjustable) Over Temperature Over Voltage UVLO	26 mOhm	AEC-Q100	Slew Rate Controlled Status Flag	650 V	1	General Purpose	Low Side	55 A	650 V	MOSFET	PWM	Half Bridge Inverter

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 35.64
		10	$ 28.96
		25	$ 27.30
		100	$ 25.46
	Digi-Reel®	1	$ 35.64
		10	$ 28.96
		25	$ 27.30
		100	$ 25.46
	Tape & Reel (TR)	250	$ 24.59
Texas Instruments	SMALL T&R	1	$ 27.11
		100	$ 24.10
		250	$ 19.81
		1000	$ 17.72

Description

General part information

LMG3522R030-Q1 Series

The LMG3522R030-Q1 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3522R030-Q1 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.