LMG3522R030-Q1 Series
Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
Manufacturer: Texas Instruments
Catalog
Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
Key Features
• AEC-Q100 qualified for automotive applicationsTemperature grade 1: –40°C to +125°C, TAJunction temperature: –40°C to +150°C, TJ650V GaN-on-Si FET with integrated gate driverIntegrated high precision gate bias voltage200V/ns FET hold-off2MHz switching frequency20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigationOperates from 7.5V to 18V supplyRobust protectionCycle-by-cycle overcurrent and latched short-circuit protection with < 100ns responseWithstands 720V surge while hard-switchingSelf-protection from internal overtemperature and UVLO monitoringAdvanced power managementDigital temperature PWM outputTop-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductanceAEC-Q100 qualified for automotive applicationsTemperature grade 1: –40°C to +125°C, TAJunction temperature: –40°C to +150°C, TJ650V GaN-on-Si FET with integrated gate driverIntegrated high precision gate bias voltage200V/ns FET hold-off2MHz switching frequency20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigationOperates from 7.5V to 18V supplyRobust protectionCycle-by-cycle overcurrent and latched short-circuit protection with < 100ns responseWithstands 720V surge while hard-switchingSelf-protection from internal overtemperature and UVLO monitoringAdvanced power managementDigital temperature PWM outputTop-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance
Description
AI
The LMG3522R030-Q1 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG3522R030-Q1 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.
The LMG3522R030-Q1 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG3522R030-Q1 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.
