LMG3522R030QRQSRQ1
ActiveAUTOMOTIVE 650-V 30-MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION AND TEMPERATURE REPORTING
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LMG3522R030QRQSRQ1
ActiveAUTOMOTIVE 650-V 30-MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION AND TEMPERATURE REPORTING
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Technical Specifications
Parameters and characteristics for this part
| Specification | LMG3522R030QRQSRQ1 |
|---|---|
| Current - Output (Max) [Max] | 38 A |
| Fault Protection | Current Limiting (Fixed), Over Temperature, UVLO, Short Circuit |
| Features | Slew Rate Controlled, Status Flag |
| Grade | Automotive |
| Input Type | Non-Inverting |
| Mounting Type | Wettable Flank, Surface Mount |
| Number of Outputs | 1 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Output Configuration | Low Side |
| Output Type | N/P-Channel |
| Package / Case | 52-VQFN Exposed Pad |
| Qualification | AEC-Q100 |
| Ratio - Input:Output [custom] | 1:1 |
| Rds On (Typ) | 26 mOhm |
| Supplier Device Package | 52-VQFN (12x12) |
| Switch Type | General Purpose |
| Voltage - Load | 650 V |
| Voltage - Supply (Vcc/Vdd) [Max] | 18 V |
| Voltage - Supply (Vcc/Vdd) [Min] | 7.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2000 | $ 17.66 | |
| Texas Instruments | LARGE T&R | 1 | $ 19.52 | |
| 100 | $ 17.05 | |||
| 250 | $ 13.15 | |||
| 1000 | $ 11.76 | |||
Description
General part information
LMG3522R030-Q1 Series
The LMG3522R030-Q1 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG3522R030-Q1 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.
Documents
Technical documentation and resources
