Specification	EGP30C

Capacitance @ Vr, F	95 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV

EGP30J Series

3.0A Ultra Fast Recovery Rectifier

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Current - Average Rectified (Io)	Speed	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
ON Semiconductor EGP30C	150 °C	-65 C	Standard	95 pF	5 µA	DO-201AD Axial	DO-201AD	950 mV	Through Hole	3 A	200 mA 500 ns	50 ns
ON Semiconductor EGP30C	150 °C	-65 C	Standard	95 pF	5 µA	DO-201AD Axial	DO-201AD	950 mV	Through Hole	3 A	200 mA 500 ns	50 ns
ON Semiconductor EGP30D	150 °C	-65 C	Standard	95 pF	5 µA	DO-201AD Axial	DO-201AD	950 mV	Through Hole	3 A	200 mA 500 ns	50 ns	200 V
ON Semiconductor EGP30J	150 °C	-65 C	Standard	75 pF	5 µA	DO-201AD Axial	DO-201AD		Through Hole	3 A	200 mA 500 ns	75 ns	600 V	1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

3.0A Ultra Fast Recovery Rectifier

Technical documentation and resources