Discrete Semiconductor Products

EGP30J

NRND

FAST / ULTRAFAST DIODE, 600 V, 3 A, SINGLE, 1.7 V, 75 NS, 125 A

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Discrete Semiconductor Products

NRND

FAST / ULTRAFAST DIODE, 600 V, 3 A, SINGLE, 1.7 V, 75 NS, 125 A

Technical Specifications

Parameters and characteristics for this part

Specification	EGP30J

Capacitance @ Vr, F	75 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

3.0A Ultra Fast Recovery Rectifier

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Current - Average Rectified (Io)	Speed	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
ON Semiconductor EGP30C	150 °C	-65 C	Standard	95 pF	5 µA	DO-201AD Axial	DO-201AD	950 mV	Through Hole	3 A	200 mA 500 ns	50 ns
ON Semiconductor EGP30C	150 °C	-65 C	Standard	95 pF	5 µA	DO-201AD Axial	DO-201AD	950 mV	Through Hole	3 A	200 mA 500 ns	50 ns
ON Semiconductor EGP30D	150 °C	-65 C	Standard	95 pF	5 µA	DO-201AD Axial	DO-201AD	950 mV	Through Hole	3 A	200 mA 500 ns	50 ns	200 V
ON Semiconductor EGP30J	150 °C	-65 C	Standard	75 pF	5 µA	DO-201AD Axial	DO-201AD		Through Hole	3 A	200 mA 500 ns	75 ns	600 V	1.7 V

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General part information

3.0A Ultra Fast Recovery Rectifier

Technical documentation and resources