Specification	JANTX2N6051

Current - Collector (Ic) (Max) [Max]	12 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1000
Grade	Military
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3, TO-204AA
Power - Max [Max]	150 W
Qualification	MIL-PRF-19500/501
Supplier Device Package	TO-204AA (TO-3)
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

JANTX2N6051-Darlington Series

Darlington PNP Silicon Power -80V to -100V, -12A

Part	Grade	Qualification	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]
Microchip Technology JANTX2N6051	Military	MIL-PRF-19500/501	150 W	TO-204AA TO-3	80 V	3 V	Through Hole	PNP - Darlington	1000	12 A	-55 °C	175 ░C	TO-204AA (TO-3)	1 mA
Microchip Technology 2N6051

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 56.55
Microchip Direct	N/A	1	$ 60.90
Newark	Each	100	$ 56.55
		500	$ 54.38

Description

General part information

JANTX2N6051-Darlington Series

This specification covers the performance requirements for PNP, Darlington, silicon, power, 2N6051 and 2N6052 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/501. The device package outlines are as follows: TO-3 for all encapsulated device types.

Documents

Technical documentation and resources

2N6051 and 2N6052

Data Sheets

Product Change Notice EN

Datasheet