JANTX2N6051-Darlington Series

Darlington PNP Silicon Power -80V to -100V, -12A

Catalog

Darlington PNP Silicon Power -80V to -100V, -12A

Part	Grade	Qualification	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]
Microchip Technology JANTX2N6051	Military	MIL-PRF-19500/501	150 W	TO-204AA TO-3	80 V	3 V	Through Hole	PNP - Darlington	1000	12 A	-55 °C	175 ░C	TO-204AA (TO-3)	1 mA
Microchip Technology 2N6051

Catalog

Darlington PNP Silicon Power -80V to -100V, -12A

Key Features

- The device package outlines are as follows: TO-3 for all encapsulated device types.

Description

This specification covers the performance requirements for PNP, Darlington, silicon, power, 2N6051 and 2N6052 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/501. The device package outlines are as follows: TO-3 for all encapsulated device types.