Discrete Semiconductor Products

STD3NM60N

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STMicroelectronics

N-CHANNEL 600 V, 1.6 OHM, 3.3 A MDMESH(TM) II POWER MOSFET IN DPAK PACKAGE

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DocumentsAN1703 TN1224 +17

Discrete Semiconductor Products

STD3NM60N

Active

STMicroelectronics

N-CHANNEL 600 V, 1.6 OHM, 3.3 A MDMESH(TM) II POWER MOSFET IN DPAK PACKAGE

Deep-Dive with AI

DocumentsAN1703 TN1224 +17

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD3NM60N

Current - Continuous Drain (Id) @ 25°C	3.3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	188 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	50 W
Rds On (Max) @ Id, Vgs	1.8 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STD3 Series

Automotive-grade N-channel 950 V, 4.3 Ohm typ., 2 A MDmesh K5 Power MOSFET in a DPAK package

Part	Drive Voltage (Max Rds On, Min Rds On)	Grade	Technology	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
STMicroelectronics STD3N95K5AG	10 V	Automotive	MOSFET (Metal Oxide)	Surface Mount	45 W	3.4 nC	5 V	2 A	5 Ohm	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	-55 °C	N-Channel	105 pF	DPAK	950 V	30 V	AEC-Q101
STMicroelectronics STD3NM60N	10 V		MOSFET (Metal Oxide)	Surface Mount	50 W		4 V	3.3 A		DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	-55 °C	N-Channel	188 pF	DPAK	600 V	25 V		9.5 nC	1.8 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.17
		10	$ 0.96
		100	$ 0.74
		500	$ 0.63
		1000	$ 0.51
	Digi-Reel®	1	$ 1.17
		10	$ 0.96
		100	$ 0.74
		500	$ 0.63
		1000	$ 0.51
	N/A	0	$ 1.39
	Tape & Reel (TR)	2500	$ 0.49
Mouser	N/A	1	$ 1.20
		10	$ 0.95
		25	$ 0.94
		100	$ 0.70
		250	$ 0.69
		500	$ 0.58
		1000	$ 0.51
		2500	$ 0.48
Newark	Each (Supplied on Cut Tape)	1	$ 1.41
		10	$ 1.16
		25	$ 1.08
		50	$ 1.00
		100	$ 0.92
		250	$ 0.85
		500	$ 0.78
		1000	$ 0.74

Description

General part information

STD3 Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.