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MFG_DPAK(TO252-3)
Discrete Semiconductor Products

STD3N95K5AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 950 V, 4.3 OHM TYP., 2 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE

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DocumentsDatasheet+15
MFG_DPAK(TO252-3)
Discrete Semiconductor Products

STD3N95K5AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 950 V, 4.3 OHM TYP., 2 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD3N95K5AG
Current - Continuous Drain (Id) @ 25°C2 A
Drain to Source Voltage (Vdss)950 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.4 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]105 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)45 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]5 Ohm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.83
10$ 1.52
100$ 1.21
500$ 1.02
1000$ 0.87
Digi-Reel® 1$ 1.83
10$ 1.52
100$ 1.21
500$ 1.02
1000$ 0.87
N/A 3000$ 2.54
Tape & Reel (TR) 2500$ 0.82
5000$ 0.79
12500$ 0.77
NewarkEach (Supplied on Cut Tape) 1$ 2.61
10$ 2.02
25$ 1.86
50$ 1.71
100$ 1.55
250$ 1.44
500$ 1.33
1000$ 1.26

Description

General part information

STD3 Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.