
STD3N95K5AG
ActiveAUTOMOTIVE-GRADE N-CHANNEL 950 V, 4.3 OHM TYP., 2 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE

STD3N95K5AG
ActiveAUTOMOTIVE-GRADE N-CHANNEL 950 V, 4.3 OHM TYP., 2 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD3N95K5AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2 A |
| Drain to Source Voltage (Vdss) | 950 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 105 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 45 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 5 Ohm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.83 | |
| 10 | $ 1.52 | |||
| 100 | $ 1.21 | |||
| 500 | $ 1.02 | |||
| 1000 | $ 0.87 | |||
| Digi-Reel® | 1 | $ 1.83 | ||
| 10 | $ 1.52 | |||
| 100 | $ 1.21 | |||
| 500 | $ 1.02 | |||
| 1000 | $ 0.87 | |||
| N/A | 3000 | $ 2.54 | ||
| Tape & Reel (TR) | 2500 | $ 0.82 | ||
| 5000 | $ 0.79 | |||
| 12500 | $ 0.77 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 2.61 | |
| 10 | $ 2.02 | |||
| 25 | $ 1.86 | |||
| 50 | $ 1.71 | |||
| 100 | $ 1.55 | |||
| 250 | $ 1.44 | |||
| 500 | $ 1.33 | |||
| 1000 | $ 1.26 | |||
Description
General part information
STD3 Series
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources