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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FOD819S |
|---|---|
| Current - DC Forward (If) (Max) | 50 mA |
| Current - Output / Channel | 30 mA |
| Current Transfer Ratio (Max) [Max] | 600 % |
| Current Transfer Ratio (Min) [Min] | 100 % |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Operating Temperature [Max] | 110 °C |
| Operating Temperature [Min] | -55 °C |
| Output Type | 1.81 mOhm |
| Package / Case | 4-SMD, Gull Wing |
| Rise / Fall Time (Typ) [custom] | 12 µs |
| Rise / Fall Time (Typ) [custom] | 20 µs |
| Supplier Device Package | 4-SMD |
| Turn On / Turn Off Time (Typ) [custom] | 18 µs |
| Turn On / Turn Off Time (Typ) [custom] | 18 µs |
| Vce Saturation (Max) [Max] | 300 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 1 | $ 1.04 | |
| 10 | $ 0.66 | |||
| 100 | $ 0.49 | |||
| 500 | $ 0.45 | |||
Description
General part information
FOD819 Series
The FOD819 consists of a gallium arsenide (GaAs) infra-red emitting diode, driving a high speed photo detector with integrated base-to-emitter resistor, RBE, in a 4-pin dual-in-line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.
Documents
Technical documentation and resources