Specification	FOD819

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	30 mA
Current Transfer Ratio (Max) [Max]	600 %
Current Transfer Ratio (Min) [Min]	100 %
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	110 °C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	4-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]	12 µs
Rise / Fall Time (Typ) [custom]	20 µs
Supplier Device Package	4-PDIP
Turn On / Turn Off Time (Typ) [custom]	18 µs
Turn On / Turn Off Time (Typ) [custom]	18 µs
Vce Saturation (Max) [Max]	300 mV

FOD819 Series

Phototransistor Optocouplers, High Speed, 4-Pin DIP

Part	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Output Type	Number of Channels	Current - DC Forward (If) (Max)	Supplier Device Package	Current - Output / Channel	Current Transfer Ratio (Min) [Min]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) [Max]	Current Transfer Ratio (Max) [Max]	Turn On / Turn Off Time (Typ) [custom]	Turn On / Turn Off Time (Typ) [custom]
ON Semiconductor FOD819	Through Hole	12 µs	20 µs	1.81 mOhm	1	50 mA	4-PDIP	30 mA	100 %	4-DIP (0.300" 7.62mm)	-55 °C	110 °C	300 mV	600 %	18 µs	18 µs
ON Semiconductor FOD819S	Surface Mount	12 µs	20 µs	1.81 mOhm	1	50 mA	4-SMD	30 mA	100 %	4-SMD Gull Wing	-55 °C	110 °C	300 mV	600 %	18 µs	18 µs

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.04
		10	$ 0.66
		100	$ 0.49
		500	$ 0.45
		1000	$ 0.37

Description

General part information

FOD819 Series

The FOD819 consists of a gallium arsenide (GaAs) infra-red emitting diode, driving a high speed photo detector with integrated base-to-emitter resistor, RBE, in a 4-pin dual-in-line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.