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TO-252-5
Discrete Semiconductor Products

FDD8424H

Obsolete
ON Semiconductor

DUAL N & P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 40V

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TO-252-5
Discrete Semiconductor Products

FDD8424H

Obsolete
ON Semiconductor

DUAL N & P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 40V

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD8424H
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C6.5 A, 9 A
Drain to Source Voltage (Vdss)40 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseDPAK (4 Leads + Tab), TO-252-5, TO-252AD
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FDD8424H_F085A Series

These dual N and P-Channel enhancement mode PowerMOSFETs are produced using ON Semiconductor Semiconductor’sadvanced PowerTrench®process that has been especiallytailored to minimize on-state resistance and yet maintainsuperior switching performance.

Documents

Technical documentation and resources