Discrete Semiconductor Products
FDD8424H-F085A
ObsoleteON Semiconductor
DUAL N & P CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 40V
Discrete Semiconductor Products
FDD8424H-F085A
ObsoleteON Semiconductor
DUAL N & P CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 40V
Technical Specifications
Parameters and characteristics for this part
| Specification | FDD8424H-F085A |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5 A, 9 A |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | DPAK (4 Leads + Tab), TO-252-5, TO-252AD |
| Rds On (Max) @ Id, Vgs | 24 mOhm |
| Supplier Device Package | TO-252 (DPAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FDD8424H_F085A Series
These dual N and P-Channel enhancement mode PowerMOSFETs are produced using ON Semiconductor Semiconductor’sadvanced PowerTrench®process that has been especiallytailored to minimize on-state resistance and yet maintainsuperior switching performance.
Documents
Technical documentation and resources
