FDD8424H_F085A Series

Dual N & P-Channel PowerTrench® MOSFET, 40V

Catalog

Dual N & P-Channel PowerTrench® MOSFET, 40V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	FET Feature	Package / Case	Configuration	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type
ON Semiconductor FDD8424H-F085A	3 V	24 mOhm	20 nC	1000 pF	-55 °C	150 °C	40 V	MOSFET (Metal Oxide)	Logic Level Gate	DPAK (4 Leads + Tab) TO-252-5 TO-252AD	N and P-Channel	6.5 A 9 A	TO-252 (DPAK)	Surface Mount
ON Semiconductor FDD8424H	3 V	24 mOhm	20 nC	1000 pF	-55 °C	150 °C	40 V	MOSFET (Metal Oxide)	Logic Level Gate	DPAK (4 Leads + Tab) TO-252-5 TO-252AD	N and P-Channel	6.5 A 9 A	TO-252 (DPAK)	Surface Mount
ON Semiconductor FDD8424H_F085	3 V	24 mOhm	20 nC	1000 pF	-55 °C	150 °C	40 V	MOSFET (Metal Oxide)	Logic Level Gate	DPAK (4 Leads + Tab) TO-252-5 TO-252AD	N and P-Channel	6.5 A 9 A	TO-252 (DPAK)	Surface Mount

Catalog

Dual N & P-Channel PowerTrench® MOSFET, 40V

Key Features

• N-Channel: 40V, 20A, 24mΩ

• P-Channel: -40V, -20A, 54mΩ

• Q1: N-Channel

• Max rDS(on)= 24mΩ at VGS= 10V, ID= 9.0A

• Max rDS(on)= 30mΩ at VGS= 4.5V, ID= 7.0A

• Q2: P-Channel

• Max rDS(on)= 54mΩ at VGS= -10V, ID= -6.5A

• Max rDS(on)= 70mΩ at VGS= -4.5V, ID= -5.6A

• Fast switching speed

• Qualified to AEC Q101

• RoHS Compliant

Description

These dual N and P-Channel enhancement mode PowerMOSFETs are produced using ON Semiconductor Semiconductor’sadvanced PowerTrench®process that has been especiallytailored to minimize on-state resistance and yet maintainsuperior switching performance.