FDV301N
ActivePOWER MOSFET, N CHANNEL, 25 V, 500 MA, 4 OHM, SOT-23 (TO-236), 3 PINS, SURFACE MOUNT
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FDV301N
ActivePOWER MOSFET, N CHANNEL, 25 V, 500 MA, 4 OHM, SOT-23 (TO-236), 3 PINS, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDV301N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 220 mA |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.7 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.7 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) [Max] | 350 mW |
| Rds On (Max) @ Id, Vgs | 4 Ohm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.06 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.26 | |
| 1 | $ 0.30 | |||
| 10 | $ 0.16 | |||
| 10 | $ 0.20 | |||
| 100 | $ 0.10 | |||
| 100 | $ 0.10 | |||
| 500 | $ 0.07 | |||
| 500 | $ 0.08 | |||
| 1000 | $ 0.06 | |||
| 1000 | $ 0.06 | |||
| Digi-Reel® | 1 | $ 0.30 | ||
| 1 | $ 0.26 | |||
| 10 | $ 0.20 | |||
| 10 | $ 0.16 | |||
| 100 | $ 0.10 | |||
| 100 | $ 0.10 | |||
| 500 | $ 0.07 | |||
| 500 | $ 0.08 | |||
| 1000 | $ 0.06 | |||
| 1000 | $ 0.06 | |||
| Tape & Reel (TR) | 3000 | $ 0.05 | ||
| 3000 | $ 0.05 | |||
| 6000 | $ 0.05 | |||
| 6000 | $ 0.05 | |||
| 9000 | $ 0.04 | |||
| 9000 | $ 0.04 | |||
| 15000 | $ 0.04 | |||
| 21000 | $ 0.04 | |||
| 30000 | $ 0.04 | |||
| 30000 | $ 0.04 | |||
| 75000 | $ 0.03 | |||
| 75000 | $ 0.03 | |||
| 150000 | $ 0.03 | |||
| 150000 | $ 0.03 | |||
| 300000 | $ 0.03 | |||
| ON Semiconductor | N/A | 1 | $ 0.03 | |
Description
General part information
FDV301N Series
This N-Channel logic level enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.