FDV301N Series

N-Channel Digital FET 25V, 0.22A, 4Ω

Catalog

N-Channel Digital FET 25V, 0.22A, 4Ω

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Supplier Device Package	Vgs (Max)
ON Semiconductor FDV301N_D87Z	0.7 nC	350 mW	-55 °C	150 °C	N-Channel	25 V	8 V	4.5 V	2.7 V	SC-59 SOT-23-3 TO-236-3	4 Ohm	1.06 V	220 mA	Surface Mount	MOSFET (Metal Oxide)	SOT-23-3
ON Semiconductor FDV301N	0.7 nC	350 mW	-55 °C	150 °C	N-Channel	25 V		4.5 V	2.7 V	SC-59 SOT-23-3 TO-236-3	4 Ohm	1.06 V	220 mA	Surface Mount	MOSFET (Metal Oxide)	SOT-23-3	8 V

Catalog

N-Channel Digital FET 25V, 0.22A, 4Ω

Key Features

• 25 V, 0.22 A continuous, 0.5 A Peak.

• RDS(ON)= 5 Ω @ VGS= 2.7 V

• RDS(ON)= 4 Ω @ VGS= 4.5 V

• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)< 1.06

• Gate-Source Zener for ESD ruggedness.>6kV Human Body Model

• Replace multiple NPN digital transistors with one DMOSFET

Description

This N-Channel logic level enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.