Discrete Semiconductor Products

FDV301N_D87Z

Obsolete

ON Semiconductor

MOSFET N-CH 25V 220MA SOT23

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

FDV301N_D87Z

Obsolete

ON Semiconductor

MOSFET N-CH 25V 220MA SOT23

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDV301N_D87Z

Current - Continuous Drain (Id) @ 25°C	220 mA
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.7 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.7 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1.06 V

FDV301N Series

N-Channel Digital FET 25V, 0.22A, 4Ω

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Supplier Device Package	Vgs (Max)
ON Semiconductor FDV301N_D87Z	0.7 nC	350 mW	-55 °C	150 °C	N-Channel	25 V	8 V	4.5 V	2.7 V	SC-59 SOT-23-3 TO-236-3	4 Ohm	1.06 V	220 mA	Surface Mount	MOSFET (Metal Oxide)	SOT-23-3
ON Semiconductor FDV301N	0.7 nC	350 mW	-55 °C	150 °C	N-Channel	25 V		4.5 V	2.7 V	SC-59 SOT-23-3 TO-236-3	4 Ohm	1.06 V	220 mA	Surface Mount	MOSFET (Metal Oxide)	SOT-23-3	8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDV301N Series

This N-Channel logic level enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.

Documents

Technical documentation and resources