Discrete Semiconductor Products
BSM120D12P2C005
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 120 A, 1.2 KV, MODULE
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Discrete Semiconductor Products
BSM120D12P2C005
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 120 A, 1.2 KV, MODULE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSM120D12P2C005 |
|---|---|
| Configuration | 2 N-Channel (Half Bridge) |
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 14000 pF |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Module |
| Power - Max [Max] | 780 W |
| Supplier Device Package | Module |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSM120C12P2C201 Series
This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
Documents
Technical documentation and resources
