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Discrete Semiconductor Products

BSM120C12P2C201

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Rohm Semiconductor

SILICON CARBIDE MOSFET, CHOPPER, N CHANNEL, 134 A, 1.2 KV, MODULE

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Search across all available documentation for this part.

DocumentsPCB Layout Thermal Design Guide Reliability Test Result +47

Product dimension image

Discrete Semiconductor Products

BSM120C12P2C201

Active

Rohm Semiconductor

SILICON CARBIDE MOSFET, CHOPPER, N CHANNEL, 134 A, 1.2 KV, MODULE

Deep-Dive with AI

DocumentsPCB Layout Thermal Design Guide Reliability Test Result +47

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSM120C12P2C201

Current	134 A
Mounting Type	Chassis Mount
Package / Case	Module
Type	MOSFET
Voltage	1.2 kV
Voltage - Isolation	2500 Vrms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 297.50
	N/A	7	$ 298.55
Newark	Each	1	$ 359.92
		5	$ 354.23
		10	$ 348.72
		36	$ 342.98

Description

General part information

BSM120 Series

This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.

Documents

Technical documentation and resources

PCB Layout Thermal Design Guide

Reliability Test Result

Manufacturing Data

Application Note for SiC Power Devices and Modules

Schematic Design & Verification

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Basics of Thermal Resistance and Heat Dissipation

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET

Technical Article

PFC Boundary Current Mode Diode-Bridge-Less: Reference Circuit

Reference Design

ROHM Solution Simulator Power Device User's Guide for Inverter

About Export Regulations

Export Information

How to Suppress the Parallel Drive Oscillation in SiC Modules

Application Note

How to Use LTspice® Models

Schematic Design & Verification

How to Use PSIM Models

Schematic Design & Verification

DC-DC Boost Converter: Reference Circuit

Reference Design

Method for Monitoring Switching Waveform

Schematic Design & Verification

ROHM Solution Simulator Power Device Use's Guide for PFC Circuits

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

Precautions for Thermal Resistance of Insulation Sheet

How to Create Symbols for PSpice Models

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Precautions When Measuring the Rear of the Package with a Thermocouple

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Judgment Criteria of Thermal Evaluation

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Thermal Resistance Measurement Method for SiC MOSFET

Oscillation countermeasures for MOSFETs in parallel

Schematic Design & Verification

How to Use Thermal Models

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

How to Use PLECS Models

Technical Article

DC-DC Boost Converter 2-Phase: Reference Circuit

Reference Design

Notes for Calculating Power Consumption:Static Operation

Compliance of the ELV directive

Environmental Data

θ<sub>JC</sub> and Ψ<sub>JT</sub>

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Taping Information

Package Information

4 Steps for Successful Thermal Designing of Power Devices

BSM120C12P2C201 Data Sheet

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Part Explanation

Application Note

What Is Thermal Design

Evaluation Board User's Guide for C-type Full SiC Module (BSMGD3C12D24-EVK001)

Optimized heat sink assembly method for effective heat dissipation

What is a Thermal Model? (SiC Power Device)

BSM120 Series

1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module

Part	Package / Case	Voltage	Type	Current	Voltage - Isolation	Mounting Type	Configuration	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor BSM120C12P2C201	Module	1.2 kV	MOSFET	134 A	2500 Vrms	Chassis Mount
Rohm Semiconductor BSM120D12P2C005	Module						2 N-Channel	2.7 V	Silicon Carbide (SiC)	-40 °C	150 °C	120 A	780 W	1.2 kV	1200 V	Module	14000 pF