Discrete Semiconductor Products
BSM120C12P2C201
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, CHOPPER, N CHANNEL, 134 A, 1.2 KV, MODULE
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Discrete Semiconductor Products
BSM120C12P2C201
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, CHOPPER, N CHANNEL, 134 A, 1.2 KV, MODULE
Technical Specifications
Parameters and characteristics for this part
| Specification | BSM120C12P2C201 |
|---|---|
| Current | 134 A |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Type | MOSFET |
| Voltage | 1.2 kV |
| Voltage - Isolation | 2500 Vrms |
BSM120C12P2C201 Series
1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module
| Part | Type | Voltage | Voltage - Isolation | Package / Case | Mounting Type | Current | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | MOSFET | 1.2 kV | 2500 Vrms | Module | Chassis Mount | 134 A | |||||||||||
 Rohm Semiconductor | Module | Module | Silicon Carbide (SiC) | 120 A | 1200 V | 1.2 kV | 2.7 V | 780 W | 14000 pF | 150 °C | -40 °C | 2 N-Channel (Half Bridge) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSM120C12P2C201 Series
This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
Documents
Technical documentation and resources