1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module
1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module
1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module
| Part | Package / Case | Voltage | Type | Current | Voltage - Isolation | Mounting Type | Configuration | Vgs(th) (Max) @ Id | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | Module | 1.2 kV | MOSFET | 134 A | 2500 Vrms | Chassis Mount | |||||||||||
 Rohm Semiconductor | Module | 2 N-Channel | 2.7 V | Silicon Carbide (SiC) | -40 °C | 150 °C | 120 A | 780 W | 1.2 kV | 1200 V | Module | 14000 pF |