BSM120C12P2C201 Series

1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module

Catalog

1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module

Part	Type	Voltage	Voltage - Isolation	Package / Case	Mounting Type	Current	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Configuration
Rohm Semiconductor BSM120C12P2C201	MOSFET	1.2 kV	2500 Vrms	Module	Chassis Mount	134 A
Rohm Semiconductor BSM120D12P2C005				Module			Module	Silicon Carbide (SiC)	120 A	1200 V	1.2 kV	2.7 V	780 W	14000 pF	150 °C	-40 °C	2 N-Channel (Half Bridge)

1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module

• Low surge, low switching loss., High-speed switching possible., Reduced temperature dependance.

This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.