Specification	MJD253T4

Current - Collector (Ic) (Max) [Max]	4 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	40 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	12.5 W
Supplier Device Package	DPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

MJD253 Series

4.0 A, 100 V PNP Bipolar Power Transistor

Part	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Power - Max [Max]	Mounting Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package
ON Semiconductor MJD253T4G	PNP	100 nA	100 V	40	4 A	150 °C	-65 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.4 W	Surface Mount	40 MHz	600 mV	DPAK
ON Semiconductor MJD253T4	PNP		100 V	40	4 A	150 °C	-65 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	12.5 W	Surface Mount	40 MHz	300 mV	DPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.