MJD253 Series

4.0 A, 100 V PNP Bipolar Power Transistor

Catalog

4.0 A, 100 V PNP Bipolar Power Transistor

Part	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Power - Max [Max]	Mounting Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package
ON Semiconductor MJD253T4G	PNP	100 nA	100 V	40	4 A	150 °C	-65 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.4 W	Surface Mount	40 MHz	600 mV	DPAK
ON Semiconductor MJD253T4	PNP		100 V	40	4 A	150 °C	-65 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	12.5 W	Surface Mount	40 MHz	300 mV	DPAK

4.0 A, 100 V PNP Bipolar Power Transistor

• Collector-Emitter Sustaining VoltageVCEO(sus)= 100 Vdc (Min) @ IC= 10 mAdc

• High DC Current GainhFE= 40 (Min) @ IC= 200 mAdchFE= 15 (Min) @ IC= 1.0 Adc

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves ("-1" Suffix)

• Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)

• Low Collector-Emitter Saturation Voltage -VCE(sat)= 0.3 Vdc (Max) @ IC= 500 mAdcVCE(sat)= 0.6 Vdc (Max) @ IC= 1.0 Adc

• High Current-Gain-Bandwith Product -fT= 40MHz (Min) @ IC= 100 mAdc

• Annular Construction for Low Leakage -ICBO= 100 nAdc @ Rated VCB

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These are PbFree Packages

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.