Discrete Semiconductor Products

MJD253T4G

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BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 100 V, 4 A, 12.5 W, TO-252 (DPAK), SURFACE MOUNT

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Discrete Semiconductor Products

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BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 100 V, 4 A, 12.5 W, TO-252 (DPAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	MJD253T4G

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	40 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.4 W
Supplier Device Package	DPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

4.0 A, 100 V PNP Bipolar Power Transistor

Part	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Power - Max [Max]	Mounting Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package
ON Semiconductor MJD253T4G	PNP	100 nA	100 V	40	4 A	150 °C	-65 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.4 W	Surface Mount	40 MHz	600 mV	DPAK
ON Semiconductor MJD253T4	PNP		100 V	40	4 A	150 °C	-65 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	12.5 W	Surface Mount	40 MHz	300 mV	DPAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.

Technical documentation and resources