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TO-18
Discrete Semiconductor Products

2N2609

Active
Microchip Technology

SILICON FIELD EFFECT TRANSISTOR FET P-CHANNEL

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TO-18
Discrete Semiconductor Products

2N2609

Active
Microchip Technology

SILICON FIELD EFFECT TRANSISTOR FET P-CHANNEL

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Technical Specifications

Parameters and characteristics for this part

Specification2N2609
Current - Drain (Idss) @ Vds (Vgs=0) [custom]5 V
Current - Drain (Idss) @ Vds (Vgs=0) [custom]2 mA
Current Drain (Id) - Max [Max]10 mA
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]10 pF
Mounting TypeThrough Hole
Package / CaseTO-18-3 Metal Can, TO-206AA
Supplier Device PackageTO-18
Supplier Device PackageTO-206AA
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id750 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBag 100$ 11.16
Microchip DirectN/A 1$ 12.01
NewarkEach 100$ 11.15
500$ 10.73

Description

General part information

2N2609-JFET-PChannel Series

This specification covers the performance requirements for P-channel, junction, silicon field-effect 2N2609 transistors. One level of product assurance (JAN) is provided for each device type as specified in MIL-PRF-19500/296. The device package outlines are a modified DO-206AA (formerly a modified TO-18) and an unleaded surface mount (UB).

Documents

Technical documentation and resources