2N2609-JFET-PChannel Series

Silicon Field Effect Transistor FET P-Channel

Catalog

Silicon Field Effect Transistor FET P-Channel

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Drain (Idss) @ Vds (Vgs=0) [custom]	Current - Drain (Idss) @ Vds (Vgs=0) [custom]	Voltage - Breakdown (V(BR)GSS)	Voltage - Cutoff (VGS off) @ Id	Supplier Device Package	Supplier Device Package	Current Drain (Id) - Max [Max]	Mounting Type	FET Type	Package / Case
Microchip Technology 2N2609	10 pF	5 V	2 mA	30 V	750 mV	TO-18	TO-206AA	10 mA	Through Hole	P-Channel	TO-18-3 Metal Can TO-206AA

Catalog

Silicon Field Effect Transistor FET P-Channel

Key Features

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Description

This specification covers the performance requirements for P-channel, junction, silicon field-effect 2N2609 transistors. One level of product assurance (JAN) is provided for each device type as specified in MIL-PRF-19500/296. The device package outlines are a modified DO-206AA (formerly a modified TO-18) and an unleaded surface mount (UB).