Zenode.ai Logo
Beta
T-MAX Pkg
Discrete Semiconductor Products

APT20M18B2VFRG

Active
Microchip Technology

MOSFET N-CH 200V 100A T-MAX

Deep-Dive with AI

Search across all available documentation for this part.

T-MAX Pkg
Discrete Semiconductor Products

APT20M18B2VFRG

Active
Microchip Technology

MOSFET N-CH 200V 100A T-MAX

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT20M18B2VFRG
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)200 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs330 nC
Input Capacitance (Ciss) (Max) @ Vds9880 pF
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Rds On (Max) @ Id, Vgs [Max]18 mOhm
Supplier Device PackageT-MAX™ [B2]
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 20$ 26.49
Microchip DirectTUBE 1$ 26.49
100$ 22.86
250$ 22.02
500$ 21.50
1000$ 20.99
5000$ 20.30

Description

General part information

FREDFET-200V Series

Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement

mode power MOSFETS. Both conduction and switching losses are addressed with

Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines