FREDFET-200V Series

200V FREDFET

Catalog

200V FREDFET

Part	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Package / Case	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs (Max)
Microchip Technology APT20M20JLL	20 mOhm	Chassis Mount	SOT-227-4 miniBLOC	N-Channel	ISOTOP®	110 nC	MOSFET (Metal Oxide)	200 V	6850 pF	104 A	5 V
Microchip Technology APT20M20JFLL	20 mOhm	Chassis Mount	SOT-227-4 miniBLOC	N-Channel	ISOTOP®	110 nC	MOSFET (Metal Oxide)	200 V	6850 pF	104 A	5 V
Microchip Technology APT20M45SVFRG		Surface Mount	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	N-Channel	D3PAK	195 nC	MOSFET (Metal Oxide)	200 V	4860 pF	56 A		45 mOhm
Microchip Technology APT20M18LVFRG	18 mOhm	Through Hole	TO-264-3 TO-264AA	N-Channel	TO-264 [L]		MOSFET (Metal Oxide)	200 V	9880 pF	100 A	4 V		330 nC
Microchip Technology APT20M20LFLLG		Through Hole	TO-264-3 TO-264AA	N-Channel	TO-264 [L]	110 nC	MOSFET (Metal Oxide)	200 V	6850 pF	100 A	5 V	20 mOhm
Microchip Technology APT20M22LVFRG		Through Hole	TO-264-3 TO-264AA	N-Channel	TO-264 [L]	435 nC	MOSFET (Metal Oxide)	200 V	10200 pF	100 A	4 V	22 mOhm		-55 °C	150 °C	10 V	520 W	30 V
Microchip Technology APT20M18B2VFRG	18 mOhm	Through Hole	TO-247-3 Variant	N-Channel	T-MAX™ [B2]		MOSFET (Metal Oxide)	200 V	9880 pF	100 A	4 V		330 nC
Microchip Technology APT20M20B2FLLG		Through Hole	TO-247-3 Variant	N-Channel	T-MAX™ [B2]	110 nC	MOSFET (Metal Oxide)	200 V	6850 pF	100 A	5 V	20 mOhm

Catalog

200V FREDFET

Description

Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds. Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip. Body Diode Options MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.