Specification	FDG6332C-F085

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	700 mA, 600 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	1.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	113 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	300 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	SC-88 (SC-70-6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

FDG6332C_F085 Series

20V N & P - Channel PowerTrench® MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Configuration	FET Feature	Power - Max [Max]	Drain to Source Voltage (Vdss)	Qualification	Grade	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDG6332C	113 pF	-55 °C	150 °C	300 mOhm	1.5 V	6-TSSOP SC-88 SOT-363	SC-88 (SC-70-6)	Surface Mount	1.5 nC	MOSFET (Metal Oxide)	600 mA 700 mA	N and P-Channel	Logic Level Gate	300 mW	20 V
ON Semiconductor FDG6332C-F085	113 pF	-55 °C	150 °C	300 mOhm	1.5 V	6-TSSOP SC-88 SOT-363	SC-88 (SC-70-6)	Surface Mount	1.5 nC	MOSFET (Metal Oxide)	600 mA 700 mA	N and P-Channel	Logic Level Gate	300 mW	20 V	AEC-Q101	Automotive
ON Semiconductor FDG6332C-PG		-55 °C	150 °C	300 mOhm 420 mOhm	1.5 V	6-TSSOP SC-88 SOT-363	SC-88 SC70-6 SOT-363	Surface Mount		MOSFET (Metal Oxide)	600 mA 700 mA	N and P-Channel Complementary		300 mW	20 V			113 pF 114 pF	2 nC	1.5 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDG6332C_F085 Series

The N & P-Channel MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.