FDG6332C
ActiveDUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 700 MA, 700 MA, 0.18 OHM
FDG6332C
ActiveDUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 700 MA, 700 MA, 0.18 OHM
Technical Specifications
Parameters and characteristics for this part
| Specification | FDG6332C |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 700 mA, 600 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 113 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 300 mW |
| Rds On (Max) @ Id, Vgs | 300 mOhm |
| Supplier Device Package | SC-88 (SC-70-6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FDG6332C_F085 Series
The N & P-Channel MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
Documents
Technical documentation and resources
