STL9N60M2
ActiveN-CHANNEL 600 V, 0.76 OHM TYP., 4.8 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE
STL9N60M2
ActiveN-CHANNEL 600 V, 0.76 OHM TYP., 4.8 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL9N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.8 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 320 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 48 W |
| Rds On (Max) @ Id, Vgs | 860 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) HV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1066 | $ 2.33 | |
Description
General part information
STL9N60M2 Series
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources