STL9N60M2 Series

N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Catalog

N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STL9N60M2	600 V	4 V	4.8 A	Surface Mount	10 nC	8-PowerVDFN	150 °C	860 mOhm	N-Channel	10 V	MOSFET (Metal Oxide)	PowerFlat™ (5x6) HV	25 V	48 W	320 pF

Catalog

N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Description

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.