Specification	R6015ENX

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	910 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

R6015 Series

600V 15A TO-3PF, Low-noise Power MOSFET

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor R6015KNZC17	600 V	27.5 nC	150 °C	TO-3P-3 Full Pack	20 V	15 A	TO-3PF	290 mOhm	60 W	MOSFET (Metal Oxide)	N-Channel	Through Hole	10 V	1050 pF	5 V
Rohm Semiconductor R6015ENZC17	600 V		150 °C	TO-3P-3 Full Pack	20 V	15 A	TO-3PF	290 mOhm	120 W	MOSFET (Metal Oxide)	N-Channel	Through Hole	10 V			40 nC	910 pF
Rohm Semiconductor R6015ENX	600 V		150 °C	TO-220-3 Full Pack	20 V	15 A	TO-220FM	290 mOhm	40 W	MOSFET (Metal Oxide)	N-Channel	Through Hole	10 V			40 nC	910 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

R6015ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.