Discrete Semiconductor Products
R6015ENZC17
ActiveRohm Semiconductor
600V 15A TO-3PF, LOW-NOISE POWER MOSFET
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Discrete Semiconductor Products
R6015ENZC17
ActiveRohm Semiconductor
600V 15A TO-3PF, LOW-NOISE POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | R6015ENZC17 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 15 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 40 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 910 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-3P-3 Full Pack |
| Power Dissipation (Max) | 120 W |
| Rds On (Max) @ Id, Vgs | 290 mOhm |
| Supplier Device Package | TO-3PF |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 218 | $ 2.69 | |
| Tube | 1 | $ 2.21 | ||
| 30 | $ 1.20 | |||
| 120 | $ 0.97 | |||
| 510 | $ 0.97 | |||
Description
General part information
R6015 Series
R6015ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.
Documents
Technical documentation and resources
