Discrete Semiconductor Products

NCV8440ASTT1G

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CLAMPED MOSFET, N-CHANNEL, WITH ESD PROTECTION/ REEL ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

CLAMPED MOSFET, N-CHANNEL, WITH ESD PROTECTION/ REEL ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	NCV8440ASTT1G

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	59 V
Drive Voltage (Max Rds On, Min Rds On)	3.5 V, 10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	155 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	1.69 W
Rds On (Max) @ Id, Vgs [Max]	110 mOhm
Supplier Device Package	SOT-223 (TO-261)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	1.9 V

Clamped MOSFET, N-Channel, with ESD Protection

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Technology
ON Semiconductor NCV8440ASTT3G	3.5 V 10 V	TO-261-4 TO-261AA	SOT-223 (TO-261)	Surface Mount	15 V	1.9 V	59 V	N-Channel	1.69 W	-55 °C	150 °C	2.6 A	155 pF	110 mOhm	MOSFET (Metal Oxide)
ON Semiconductor NCV8440ASTT1G	3.5 V 10 V	TO-261-4 TO-261AA	SOT-223 (TO-261)	Surface Mount	15 V	1.9 V	59 V	N-Channel	1.69 W	-55 °C	150 °C	2.6 A	155 pF	110 mOhm	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NCV8440 is a protected N-Channel power MOSFET device. The protection feature includes integrated Drain-to-Gate clamping for overvoltage protection.

Technical documentation and resources