Specification	NCV8440ASTT3G

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	59 V
Drive Voltage (Max Rds On, Min Rds On)	3.5 V, 10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	155 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	1.69 W
Rds On (Max) @ Id, Vgs [Max]	110 mOhm
Supplier Device Package	SOT-223 (TO-261)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	1.9 V

NCV8440A Series

Clamped MOSFET, N-Channel, with ESD Protection

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Technology
ON Semiconductor NCV8440ASTT3G	3.5 V 10 V	TO-261-4 TO-261AA	SOT-223 (TO-261)	Surface Mount	15 V	1.9 V	59 V	N-Channel	1.69 W	-55 °C	150 °C	2.6 A	155 pF	110 mOhm	MOSFET (Metal Oxide)
ON Semiconductor NCV8440ASTT1G	3.5 V 10 V	TO-261-4 TO-261AA	SOT-223 (TO-261)	Surface Mount	15 V	1.9 V	59 V	N-Channel	1.69 W	-55 °C	150 °C	2.6 A	155 pF	110 mOhm	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NCV8440 is a protected N-Channel power MOSFET device. The protection feature includes integrated Drain-to-Gate clamping for overvoltage protection.