NCV8440A Series

Clamped MOSFET, N-Channel, with ESD Protection

Catalog

Clamped MOSFET, N-Channel, with ESD Protection

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Technology
ON Semiconductor NCV8440ASTT3G	3.5 V 10 V	TO-261-4 TO-261AA	SOT-223 (TO-261)	Surface Mount	15 V	1.9 V	59 V	N-Channel	1.69 W	-55 °C	150 °C	2.6 A	155 pF	110 mOhm	MOSFET (Metal Oxide)
ON Semiconductor NCV8440ASTT1G	3.5 V 10 V	TO-261-4 TO-261AA	SOT-223 (TO-261)	Surface Mount	15 V	1.9 V	59 V	N-Channel	1.69 W	-55 °C	150 °C	2.6 A	155 pF	110 mOhm	MOSFET (Metal Oxide)

Clamped MOSFET, N-Channel, with ESD Protection

• Diode Clamp Between Gate and Source

• ESD Protection HBM 5000 V

• Active Overvoltage Gate to Drain Clamp

• Scalable to Lower or Higher RDS(on)

• Internal Series Gate Resistance

NCV8440 is a protected N-Channel power MOSFET device. The protection feature includes integrated Drain-to-Gate clamping for overvoltage protection.