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GWA75H65DRFB2AG
Discrete Semiconductor Products

GWA75H65DRFB2AG

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STMicroelectronics

AUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP, 650 V, 75 A, HIGH-SPEED HB2 SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

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GWA75H65DRFB2AG
Discrete Semiconductor Products

GWA75H65DRFB2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP, 650 V, 75 A, HIGH-SPEED HB2 SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGWA75H65DRFB2AG
Current - Collector (Ic) (Max) [Max]123 A
Current - Collector Pulsed (Icm)240 A
Gate Charge253 nC
GradeAutomotive
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]395 W
QualificationAEC-Q101
Reverse Recovery Time (trr)710 ns
Supplier Device PackageTO-247 Long Leads
Switching Energy900 µJ, 12.9 mJ
Td (on/off) @ 25°C [custom]103 ns
Td (on/off) @ 25°C [custom]28 ns
Test Condition75 A, 15 V, 2.2 Ohm, 400 V
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 2.58

Description

General part information

GWA75H65DRFB2AG Series

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optimized both in conduction and switching energies for hard switching application. In this configuration, it has been co-packed with a high ruggedness rectifier diode targeting heavy duty and high reliability automotive applications.