GWA75H65DRFB2AG Series

Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package

Catalog

Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package

Part	Qualification	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	IGBT Type	Test Condition	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Switching Energy	Current - Collector Pulsed (Icm)	Gate Charge	Power - Max [Max]	Grade
STMicroelectronics GWA75H65DRFB2AG	AEC-Q101	103 ns	28 ns	Trench Field Stop	2.2 Ohm 15 V 75 A 400 V	710 ns	123 A	175 °C	-55 °C	2 V	TO-247 Long Leads	Through Hole	650 V	TO-247-3	12.9 mJ 900 µJ	240 A	253 nC	395 W	Automotive

Catalog

Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optimized both in conduction and switching energies for hard switching application. In this configuration, it has been co-packed with a high ruggedness rectifier diode targeting heavy duty and high reliability automotive applications.