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TJ15S06M3L - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -60 V, -15 A, 0.05 Ω@10V, DPAK+
Discrete Semiconductor Products

TJ10S04M3L,LXHQ

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -40 V, -10 A, 0.044 Ω@10V, DPAK+

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TJ15S06M3L - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -60 V, -15 A, 0.05 Ω@10V, DPAK+
Discrete Semiconductor Products

TJ10S04M3L,LXHQ

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -40 V, -10 A, 0.044 Ω@10V, DPAK+

Technical Specifications

Parameters and characteristics for this part

SpecificationTJ10S04M3L,LXHQ
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]930 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)27 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs44 mOhm
Supplier Device PackageDPAK+
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]10 V
Vgs (Max) [Min]-20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.31
10$ 0.82
100$ 0.55
500$ 0.43
1000$ 0.39
Digi-Reel® 1$ 1.31
10$ 0.82
100$ 0.55
500$ 0.43
1000$ 0.39
N/A 3524$ 0.93
Tape & Reel (TR) 2000$ 0.35
4000$ 0.32
6000$ 0.31
10000$ 0.30

Description

General part information

TJ10S04M3L Series

P-Channel 40 V 10A (Ta) 27W (Tc) Surface Mount DPAK+

Documents

Technical documentation and resources

TJ10S04M3L Data sheet/Japanese

Data sheet

MOSFET Gate Drive Circuit: Power MOSFET Application Notes

Application Note

Hints and Tips for Thermal Design part3

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode

Application Note

Electrical Characteristics: Power MOSFET Application Notes

Application Note

Calculating the Temperature of Discrete Semiconductor Devices

Application Note

Maximum Ratings: Power MOSFET Application Notes

Application Note

RC Snubbers for Step-Down Converters

Application Note

MOSFET Self-Turn-On Phenomenon

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes

Application Note

MOSFET SPICE model grade

Application Note

Structures and Characteristics: Power MOSFET Application Notes

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices

Application Note

Motor Control (Vacuum Cleaners)

Application Note

TJ10S04M3L Data sheet/English

Data sheet

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system

Application Note

MOSFET Secondary Breakdown

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes

Application Note

Selection Guide MOSFETs 2025 Rev1.0

Catalog

Hints and Tips for Thermal Design for Discrete Semiconductor Devices

Application Note

Resonant Circuits and Soft Switching

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2

Application Note

Avalanche energy calculation

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1

Application Note

Derating of the MOSFET Safe Operating Area

Application Note