Discrete Semiconductor Products
TJ10S04M3L(T6L1,NQ
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -40 V, -10 A, 0.044 Ω@10V, DPAK+
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Discrete Semiconductor Products
TJ10S04M3L(T6L1,NQ
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -40 V, -10 A, 0.044 Ω@10V, DPAK+
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Technical Specifications
Parameters and characteristics for this part
| Specification | TJ10S04M3L(T6L1,NQ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 930 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 27 W |
| Rds On (Max) @ Id, Vgs | 44 mOhm |
| Supplier Device Package | DPAK+ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 10 V |
| Vgs (Max) [Min] | -20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1654 | $ 1.38 | |
Description
General part information
TJ10S04M3L Series
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -40 V, -10 A, 0.044 Ω@10V, DPAK+
Documents
Technical documentation and resources