TJ10S04M3L Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -40 V, -10 A, 0.044 Ω@10V, DPAK+
| Part | Vgs (Max) [Max] | Vgs (Max) [Min] | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Rds On (Max) @ Id, Vgs | FET Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Technology | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 10 V | -20 V | 27 W | 3 V | 6 V 10 V | Surface Mount | 930 pF | 19 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 44 mOhm | P-Channel | 40 V | DPAK+ | MOSFET (Metal Oxide) | 175 °C | 10 A | ||
Toshiba Semiconductor and Storage | 10 V | -20 V | 27 W | 3 V | 6 V 10 V | Surface Mount | 930 pF | 19 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 44 mOhm | P-Channel | 40 V | DPAK+ | MOSFET (Metal Oxide) | 175 °C | 10 A | AEC-Q101 | Automotive |