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R6022YNZ4C13

Discrete Semiconductor Products

RGT50TS65DGC13

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Rohm Semiconductor

5ΜS SHORT-CIRCUIT TOLERANCE, 650V 25A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT

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Search across all available documentation for this part.

DocumentsJudgment Criteria of Thermal Evaluation What Is Thermal Design +28

R6022YNZ4C13

Discrete Semiconductor Products

RGT50TS65DGC13

Active

Rohm Semiconductor

5ΜS SHORT-CIRCUIT TOLERANCE, 650V 25A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT

Deep-Dive with AI

DocumentsJudgment Criteria of Thermal Evaluation What Is Thermal Design +28

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGT50TS65DGC13

Current - Collector Pulsed (Icm)	75 A
Gate Charge	49 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	174 W
Reverse Recovery Time (trr)	58 ns
Supplier Device Package	TO-247G
Td (on/off) @ 25°C	27 ns
Td (on/off) @ 25°C	88 ns
Test Condition	400 V, 25 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.56
		10	$ 7.29
		100	$ 5.44
		600	$ 4.90
Newark	Each	1	$ 9.32
		10	$ 7.54
		25	$ 6.71
		50	$ 6.13
		100	$ 5.17
		250	$ 4.22

Description

General part information

RGT50NS65D(TO-262) Series

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Documents

Technical documentation and resources

Judgment Criteria of Thermal Evaluation

What Is Thermal Design

Compliance of the ELV directive

Environmental Data

Moisture Sensitivity Level

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Two-Resistor Model for Thermal Simulation

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Types and Features of Transistors

Application Note

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Reliability Test Result

Manufacturing Data

4 Steps for Successful Thermal Designing of Power Devices

Notes for Temperature Measurement Using Thermocouples

About Export Administration Regulations (EAR)

Export Information

PCB Layout Thermal Design Guide

Simulation Guide for PTC Heater Thermal Simulation (ROHM Solution Simulator)

Anti-Whisker formation

Package Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

How to Create Symbols for PSpice Models

About Flammability of Materials

Environmental Data

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Precautions for Thermal Resistance of Insulation Sheet

Method for Monitoring Switching Waveform

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

RGT50NS65D(TO-262) Series

5µs Short-Circuit Tolerance, 650V 25A, FRD Built-in, TO-247GE, Field Stop Trench IGBT

Part	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	IGBT Type
Rohm Semiconductor RGT50NS65DGTL	10 Ohm 15 V 25 A 400 V	27 ns	88 ns	75 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	194 W	650 V	Surface Mount	-40 C	175 °C	LPDS	49 nC	58 ns	2.1 V	Trench Field Stop
Rohm Semiconductor RGT50NS65DGC9	10 Ohm 15 V 25 A 400 V	27 ns	88 ns	75 A	I2PAK TO-262-3 Long Leads TO-262AA	194 W	650 V	Through Hole	-40 C	175 °C	TO-262	49 nC	58 ns	2.1 V	Trench Field Stop
Rohm Semiconductor RGT50TS65DGC13	10 Ohm 15 V 25 A 400 V	27 ns	88 ns	75 A	TO-247-3	174 W	650 V	Through Hole	-40 C	175 °C	TO-247G	49 nC	58 ns	2.1 V	Trench Field Stop