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ROHM RGT40NS65DGC9

Discrete Semiconductor Products

RGT50NS65DGC9

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Rohm Semiconductor

5ΜS SHORT-CIRCUIT TOLERANCE, 650V 25A, FRD BUILT-IN, TO-262, FIELD STOP TRENCH IGBT

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials +30

ROHM RGT40NS65DGC9

Discrete Semiconductor Products

RGT50NS65DGC9

Active

Rohm Semiconductor

5ΜS SHORT-CIRCUIT TOLERANCE, 650V 25A, FRD BUILT-IN, TO-262, FIELD STOP TRENCH IGBT

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials +30

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGT50NS65DGC9

Current - Collector Pulsed (Icm)	75 A
Gate Charge	49 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power - Max [Max]	194 W
Reverse Recovery Time (trr)	58 ns
Supplier Device Package	TO-262
Td (on/off) @ 25°C	27 ns
Td (on/off) @ 25°C	88 ns
Test Condition	400 V, 25 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.43
		50	$ 1.78
		100	$ 1.76
Newark	Each	1	$ 3.57
		10	$ 2.87
		25	$ 2.37
		50	$ 1.86
		100	$ 1.83

Description

General part information

RGT50NS65D(TO-262) Series

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Documents

Technical documentation and resources

Technical Data Sheet EN

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Two-Resistor Model for Thermal Simulation

PCB Layout Thermal Design Guide

Judgment Criteria of Thermal Evaluation

Compliance of the ELV directive

Environmental Data

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Moisture Sensitivity Level

Package Information

How to Use the Thermal Resistance and Thermal Characteristics Parameters

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Types and Features of Transistors

Application Note

Anti-Whisker formation

Package Information

4 Steps for Successful Thermal Designing of Power Devices

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

How to Create Symbols for PSpice Models

Measurement Method and Usage of Thermal Resistance RthJC

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Method for Monitoring Switching Waveform

Schematic Design & Verification

RGT50NS65D(TO-262) Data Sheet

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Notes for Temperature Measurement Using Thermocouples

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Precautions for Thermal Resistance of Insulation Sheet

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Reliability Test Result

Manufacturing Data

What Is Thermal Design

Explanation for Marking

Package Information

About Flammability of Materials

Environmental Data

About Export Administration Regulations (EAR)

Export Information

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

RGT50NS65D(TO-262) Series

5µs Short-Circuit Tolerance, 650V 25A, FRD Built-in, TO-247GE, Field Stop Trench IGBT

Part	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	IGBT Type
Rohm Semiconductor RGT50NS65DGTL	10 Ohm 15 V 25 A 400 V	27 ns	88 ns	75 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	194 W	650 V	Surface Mount	-40 C	175 °C	LPDS	49 nC	58 ns	2.1 V	Trench Field Stop
Rohm Semiconductor RGT50NS65DGC9	10 Ohm 15 V 25 A 400 V	27 ns	88 ns	75 A	I2PAK TO-262-3 Long Leads TO-262AA	194 W	650 V	Through Hole	-40 C	175 °C	TO-262	49 nC	58 ns	2.1 V	Trench Field Stop
Rohm Semiconductor RGT50TS65DGC13	10 Ohm 15 V 25 A 400 V	27 ns	88 ns	75 A	TO-247-3	174 W	650 V	Through Hole	-40 C	175 °C	TO-247G	49 nC	58 ns	2.1 V	Trench Field Stop