FDC642P
ActiveP-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED -20 V, -4.0 A, 65 MΩ
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FDC642P
ActiveP-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED -20 V, -4.0 A, 65 MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDC642P |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 925 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Rds On (Max) @ Id, Vgs | 65 mOhm |
| Supplier Device Package | SuperSOT™-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1516 | $ 0.20 | |
| 1516 | $ 0.20 | |||
| Cut Tape (CT) | 1 | $ 0.55 | ||
| 1 | $ 0.55 | |||
| 10 | $ 0.47 | |||
| 10 | $ 0.47 | |||
| 100 | $ 0.33 | |||
| 100 | $ 0.33 | |||
| 500 | $ 0.25 | |||
| 500 | $ 0.25 | |||
| 1000 | $ 0.21 | |||
| 1000 | $ 0.21 | |||
| Digi-Reel® | 1 | $ 0.55 | ||
| 1 | $ 0.55 | |||
| 10 | $ 0.47 | |||
| 10 | $ 0.47 | |||
| 100 | $ 0.33 | |||
| 100 | $ 0.33 | |||
| 500 | $ 0.25 | |||
| 500 | $ 0.25 | |||
| 1000 | $ 0.21 | |||
| 1000 | $ 0.21 | |||
| Tape & Reel (TR) | 3000 | $ 0.19 | ||
| 3000 | $ 0.19 | |||
| 6000 | $ 0.18 | |||
| 6000 | $ 0.18 | |||
| 9000 | $ 0.16 | |||
| 9000 | $ 0.16 | |||
| 30000 | $ 0.16 | |||
| 30000 | $ 0.16 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.73 | |
| 10 | $ 0.51 | |||
| 25 | $ 0.45 | |||
| 50 | $ 0.40 | |||
| 100 | $ 0.35 | |||
| 250 | $ 0.31 | |||
| 500 | $ 0.27 | |||
| 1000 | $ 0.24 | |||
| ON Semiconductor | N/A | 1 | $ 0.17 | |
Description
General part information
FDC642P Series
This P-Channel 2.5V specified MOSFET is produced using an PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
Documents
Technical documentation and resources