FDC642P_SB4N006

Obsolete

ON Semiconductor

MOSFET N-CH SSOT6

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Discrete Semiconductor Products

FDC642P_SB4N006

Obsolete

ON Semiconductor

MOSFET N-CH SSOT6

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDC642P_SB4N006

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FDC642P Series

P-Channel PowerTrench<sup>®</sup> MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ

Part	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case
ON Semiconductor FDC642P	P-Channel	65 mOhm	Surface Mount	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	1.5 V	16 nC	8 V	4 A	2.5 V 4.5 V	SuperSOT™-6	925 pF	SOT-23-6 Thin TSOT-23-6
ON Semiconductor FDC642P_SB4N006
ON Semiconductor FDC642P	P-Channel	65 mOhm	Surface Mount	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	1.5 V	16 nC	8 V	4 A	2.5 V 4.5 V	SuperSOT™-6	925 pF	SOT-23-6 Thin TSOT-23-6

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDC642P Series

This P-Channel 2.5V specified MOSFET is produced using an PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

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