FDC642P Series

P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ

Catalog

P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ

Part	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case
ON Semiconductor FDC642P	P-Channel	65 mOhm	Surface Mount	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	1.5 V	16 nC	8 V	4 A	2.5 V 4.5 V	SuperSOT™-6	925 pF	SOT-23-6 Thin TSOT-23-6
ON Semiconductor FDC642P_SB4N006
ON Semiconductor FDC642P	P-Channel	65 mOhm	Surface Mount	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	1.5 V	16 nC	8 V	4 A	2.5 V 4.5 V	SuperSOT™-6	925 pF	SOT-23-6 Thin TSOT-23-6

Catalog

P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ

Key Features

• Max rDS(ON)= 65mΩ at VGS= -4.5 V, ID= -4.0A

• Max rDS(ON)= 100mΩ at VGS= -2.5 V, ID= -3.2A

• Fast switching speed.

• Low gate charge (11nC typical).

• High performance trench technology for extremely low rDS(ON).

• SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

• Termination is Lead-free and RoHS Compliant

Description

This P-Channel 2.5V specified MOSFET is produced using an PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.