Specification	MSCDC600A120AG

Current - Average Rectified (Io) (per Diode)	600 A
Current - Reverse Leakage @ Vr	2.4 mA
Diode Configuration	1 Pair Series Connection
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Module
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	SP6
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

MSCDC600A170AG-Module Series

1700V, 600A, SP6C Phase Leg mSiC™ Diode Module

Part	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Reverse Recovery Time (trr)	Speed	Technology	Package / Case	Current - Reverse Leakage @ Vr
Microchip Technology MSCDC600A170AG	600 A	1 Pair Series Connection	-40 °C	175 ░C	1700 V	SP6C	1.8 V	Chassis Mount	0 ns	No Recovery Time	SiC (Silicon Carbide) Schottky	Module
Microchip Technology MSCDC600A120AG	600 A	1 Pair Series Connection	-40 °C	175 ░C	1.2 kV	SP6	1.8 V	Chassis Mount	0 ns	No Recovery Time	SiC (Silicon Carbide) Schottky	Module	2.4 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* SiC Schottky Diode

* Zero reverse recovery

* Zero forward recovery

Technical documentation and resources